

RSR025N03
RSR025N03
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Specifications
RoHS | Compliant |
---|---|
Continuous Drain Current (ID) | 2.5 A |
Drain to Source Voltage (Vdss) | 30 V |
RoHS | Compliant |
---|---|
Continuous Drain Current (ID) | 2.5 A |
Drain to Source Voltage (Vdss) | 30 V |