2N6849
RoHS

2N6849

2N6849

Microsemi

MOSFET P-CH 100V 6.5A TO39

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2N6849

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Products Specifications
PackageBulk
Series-
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C6.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)320mOhm @ 6.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs34.8 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds800mW (Ta), 25W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-39
MountingTypeTO-205AF Metal Can
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification