IRFH5006TRPBF
| Part No | IRFH5006TRPBF |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 60V 21A/100A 8PQFN |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
23411
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.142 | |
| 10 | 2.0992 | |
| 100 | 2.0349 | |
| 1000 | 1.9706 | |
| 10000 | 1.885 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 5.15 mm |
| Height | 990.6 µm |
| Length | 6.1468 mm |
| Fall Time | 12 ns |
| Lead Free | Lead Free |
| Packaging | Tape & Reel |
| Rise Time | 13 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 4.1 mΩ |
| Resistance | 4.1 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 2 V |
| Case/Package | QFN |
| Number of Pins | 8 |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Package Quantity | 4000 |
| Input Capacitance | 4.175 nF |
| Power Dissipation | 250 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.6 ns |
| On-State Resistance | 4.1 mΩ |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30 ns |
| Max Power Dissipation | 3.6 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 3.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 100 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 60 V |
| Drain to Source Breakdown Voltage | 60 V |
