SQJ886EP-T1_GE3
RoHS

SQJ886EP-T1_GE3

SQJ886EP-T1_GE3

Vishay

MOSFET N-CH 40V 60A PPAK SO-8

Download Datasheet

SQJ886EP-T1_GE3

In Stock: 18796
Pricing
QTY UNIT PRICE EXT PRICE
1 1.3137
10 1.2874
100 1.248
1000 1.2086
10000 1.1561
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Request Quotation
Products Specifications
RoHSCompliant
MountSurface Mount
Fall Time6 ns
Lead FreeLead Free
PackagingTape & Reel (TR)
Rise Time17 ns
REACH SVHCUnknown
Rds On Max4.5 mΩ
Number of Pins8
Input Capacitance2.922 nF
Power Dissipation55 W
Threshold Voltage2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time8 ns
Radiation HardeningNo
Turn-Off Delay Time29 ns
Max Power Dissipation55 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance3.6 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)60 A
Drain to Source Voltage (Vdss)40 V
Drain to Source Breakdown Voltage40 V