SIRA20DP-T1-RE3
| Part No | SIRA20DP-T1-RE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CHAN 25V POWERPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
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Availability:
19597
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.6264 | |
| 10 | 1.5939 | |
| 100 | 1.5451 | |
| 1000 | 1.4963 | |
| 10000 | 1.4312 |
Specifications
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
|---|---|
| Vgs (Max) | +16V, -12V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® SO-8 |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 0.58 mOhm @ 20A, 10V |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® SO-8 |
| Other Names | SIRA20DP-T1-RE3CT |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 32 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 10850pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Detailed Description | N-Channel 25V 81.7A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8 |
| Current - Continuous Drain (Id) @ 25°C | 81.7A (Ta), 100A (Tc) |
