SIR496DP-T1-GE3
RoHS

SIR496DP-T1-GE3

SIR496DP-T1-GE3

Vishay

MOSFET N-CH 20V 35A PPAK SO-8

Download Datasheet

SIR496DP-T1-GE3

In Stock: 17104
Pricing
QTY UNIT PRICE EXT PRICE
1Get latest price!-
10Get latest price!-
100Get latest price!-
1000Get latest price!-
10000Get latest price!-
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Request Quotation
Products Specifications
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time17 ns
Lead FreeLead Free
Rise Time13 ns
REACH SVHCUnknown
Rds On Max4.5 mΩ
Case/PackageSOIC
Number of Pins8
Input Capacitance1.57 nF
Power Dissipation5 W
Threshold Voltage2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time21 ns
Radiation HardeningNo
Turn-Off Delay Time29 ns
Element ConfigurationSingle
Max Power Dissipation5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance4.6 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)35 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V