SIA413DJ-T1-GE3
RoHS

SIA413DJ-T1-GE3

SIA413DJ-T1-GE3

Vishay

MOSFET P-CH 12V 12A SC70-6

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SIA413DJ-T1-GE3

In Stock: 22878
Pricing
QTY UNIT PRICE EXT PRICE
1 0.981
10 0.9614
100 0.932
1000 0.9025
10000 0.8633
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Width2.05 mm
Height750 µm
Length2.05 mm
Fall Time40 ns
Lead FreeLead Free
Rise Time40 ns
REACH SVHCUnknown
Rds On Max29 mΩ
Resistance29 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-1 V
Case/PackageSC
Number of Pins6
Contact PlatingTin
Input Capacitance1.8 nF
Power Dissipation3.5 W
Threshold Voltage-1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time70 ns
Element ConfigurationSingle
Max Power Dissipation19 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance29 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)10 A
Drain to Source Voltage (Vdss)12 V
Drain to Source Breakdown Voltage-12 V