SI9407BDY-T1-GE3
RoHS

SI9407BDY-T1-GE3

SI9407BDY-T1-GE3

Vishay

MOSFET P-CH 60V 4.7A 8-SOIC

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SI9407BDY-T1-GE3

In Stock: 38509
Pricing
QTY UNIT PRICE EXT PRICE
1 0.8964
10 0.8785
100 0.8516
1000 0.8247
10000 0.7888
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight506.605978 mg
Fall Time30 ns
Lead FreeLead Free
Rise Time70 ns
REACH SVHCNo SVHC
Rds On Max120 mΩ
Resistance120 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSO
Number of Pins8
Input Capacitance600 pF
Power Dissipation2.4 W
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time35 ns
Element ConfigurationSingle
Max Power Dissipation5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance100 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-3.2 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-60 V
Drain to Source Breakdown Voltage-60 V