SI8425DB-T1-E1
| Part No | SI8425DB-T1-E1 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 20V MICROFOOT |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
18366
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5244 | |
| 10 | 0.5139 | |
| 100 | 0.4982 | |
| 1000 | 0.4824 | |
| 10000 | 0.4615 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Fall Time | 200 ns |
| Lead Free | Lead Free |
| Rise Time | 50 ns |
| Rds On Max | 23 mΩ |
| Resistance | 23 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 4 |
| Contact Plating | Tin |
| Input Capacitance | 2.8 nF |
| Power Dissipation | 2.7 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 50 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 600 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.1 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 23 mΩ |
| Gate to Source Voltage (Vgs) | 10 V |
| Continuous Drain Current (ID) | 9.3 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drain to Source Breakdown Voltage | -20 V |
