SI7886ADP-T1-E3
RoHS

SI7886ADP-T1-E3

SI7886ADP-T1-E3

Vishay

MOSFET N-CH 30V 15A PPAK SO-8

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SI7886ADP-T1-E3

Availability: 18995
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Specifications

RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time14 ns
Lead FreeLead Free
Rise Time14 ns
Rds On Max4 mΩ
Number of Pins8
Input Capacitance6.45 nF
Number of Channels1
Turn-On Delay Time17 ns
Turn-Off Delay Time158 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance4 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)15 A
Drain to Source Voltage (Vdss)30 V