SI7852ADP-T1-GE3
RoHS

SI7852ADP-T1-GE3

SI7852ADP-T1-GE3

Vishay

MOSFET N-CH 80V 30A PPAK SO-8

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SI7852ADP-T1-GE3

In Stock: 18888
Pricing
QTY UNIT PRICE EXT PRICE
1 2.268
10 2.2226
100 2.1546
1000 2.0866
10000 1.9958
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time9 ns
Lead FreeLead Free
Rise Time9 ns
REACH SVHCUnknown
Rds On Max17 mΩ
Resistance17 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOIC
Number of Pins8
Input Capacitance1.825 nF
Power Dissipation5 W
Threshold Voltage4.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time26 ns
Element ConfigurationSingle
Max Power Dissipation5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance14 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)12 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)80 V
Manufacturer Package IdentifierS17-0173_SINGLE
Drain to Source Breakdown Voltage80 V