SI7315DN-T1-GE3
RoHS

SI7315DN-T1-GE3

SI7315DN-T1-GE3

Vishay

MOSFET P-CH 150V 8.9A 1212-8

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SI7315DN-T1-GE3

In Stock: 16283
Pricing
QTY UNIT PRICE EXT PRICE
1 1.3068
10 1.2807
100 1.2415
1000 1.2023
10000 1.15
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
RoHSCompliant
MountSurface Mount
Height1.12 mm
Fall Time8 ns
PackagingDigi-Reel®
Rise Time9 ns
REACH SVHCUnknown
Rds On Max315 mΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
Number of Pins8
Contact PlatingTin
Input Capacitance880 pF
Power Dissipation3.8 W
Number of Channels1
Number of Elements1
Turn-On Delay Time8 ns
Turn-Off Delay Time23 ns
Max Power Dissipation52 W
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Drain to Source Resistance262 mΩ
Gate to Source Voltage (Vgs)30 V
Continuous Drain Current (ID)-8.9 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-150 V
Drain to Source Breakdown Voltage-150 V