SI7117DN-T1-E3
| Part No | SI7117DN-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 150V 2.17A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
18384
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3335 | |
| 10 | 1.3068 | |
| 100 | 1.2668 | |
| 1000 | 1.2268 | |
| 10000 | 1.1735 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 3.05 mm |
| Height | 1.04 mm |
| Length | 3.05 mm |
| Fall Time | 11 ns |
| Lead Free | Lead Free |
| Rise Time | 11 ns |
| Rds On Max | 1.2 Ω |
| Resistance | 1.2 Ω |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85 |
| Number of Pins | 8 |
| Input Capacitance | 510 pF |
| Power Dissipation | 3.2 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16 ns |
| Element Configuration | Single |
| Max Power Dissipation | 12.5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 1.2 Ω |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 1.1 A |
| Drain to Source Voltage (Vdss) | 150 V |
