SI7116DN-T1-E3
RoHS

SI7116DN-T1-E3

SI7116DN-T1-E3

Vishay

MOSFET N-CH 40V 10.5A 1212-8

Download Datasheet

SI7116DN-T1-E3

In Stock: 16129
Pricing
QTY UNIT PRICE EXT PRICE
1 2.279
10 2.2334
100 2.165
1000 2.0967
10000 2.0055
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Request Quotation
Products Specifications
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time15 ns
Lead FreeLead Free
Rise Time15 ns
REACH SVHCUnknown
Rds On Max7.8 mΩ
Resistance7.8 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Power Dissipation1.5 W
Threshold Voltage2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time36 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance6.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)10.5 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)40 V