SI5853CDC-T1-E3
RoHS

SI5853CDC-T1-E3

SI5853CDC-T1-E3

Vishay

MOSFET P-CH 20V 4A 1206-8

Download Datasheet

SI5853CDC-T1-E3

In Stock: 16808
Pricing
QTY UNIT PRICE EXT PRICE
1Get latest price!-
10Get latest price!-
100Get latest price!-
1000Get latest price!-
10000Get latest price!-
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Request Quotation
Products Specifications
RoHSCompliant
MountSurface Mount
Fall Time15 ns
Lead FreeLead Free
Rise Time15 ns
Rds On Max104 mΩ
Resistance104 mΩ
Case/PackageSMD/SMT
Number of Pins8
Input Capacitance350 pF
Number of Channels1
Turn-On Delay Time5 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Max Power Dissipation3.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance104 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)2.9 A
Drain to Source Voltage (Vdss)20 V