SI4835DDY-T1-E3
| Part No | SI4835DDY-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 13A 8-SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
22764
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3688 | |
| 10 | 1.3414 | |
| 100 | 1.3004 | |
| 1000 | 1.2593 | |
| 10000 | 1.2045 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 4 mm |
| Height | 1.5 mm |
| Length | 5 mm |
| Weight | 186.993455 mg |
| Fall Time | 15 ns |
| Lead Free | Lead Free |
| Rise Time | 100 ns |
| REACH SVHC | Unknown |
| Rds On Max | 3 Ω |
| Resistance | 18 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Input Capacitance | 360 pF |
| Power Dissipation | 2.5 W |
| Threshold Voltage | -3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 44 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28 ns |
| Element Configuration | Single |
| Max Power Dissipation | 2.5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 18 mΩ |
| Gate to Source Voltage (Vgs) | 25 V |
| Continuous Drain Current (ID) | 8.7 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drain to Source Breakdown Voltage | -30 V |
