SI4410BDY-T1-GE3
| Part No | SI4410BDY-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 7.5A 8-SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
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Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 4 mm |
| Height | 1.55 mm |
| Length | 5 mm |
| Weight | 186.993455 mg |
| Fall Time | 15 ns |
| Rise Time | 10 ns |
| REACH SVHC | Unknown |
| Rds On Max | 13.5 mΩ |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Power Dissipation | 1.4 W |
| Threshold Voltage | 1 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.4 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 13.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 7.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
