SI3424DV-T1-E3
RoHS

SI3424DV-T1-E3

SI3424DV-T1-E3

Vishay

MOSFET N-CH 30V 5A 6-TSOP

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SI3424DV-T1-E3

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Products Specifications
RoHSCompliant
MountSurface Mount
Fall Time10 ns
Lead FreeLead Free
Rise Time10 ns
REACH SVHCUnknown
Rds On Max28 mΩ
Resistance28 mΩ
Nominal Vgs800 mV
Case/PackageTSOP
Number of Pins6
Power Dissipation1.14 W
Threshold Voltage800 mV
Number of Elements1
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Element ConfigurationSingle
Max Power Dissipation1.14 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance28 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)5 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V