SI3417DV-T1-GE3
| Part No | SI3417DV-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 8A TSOP-6 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
16019
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.352 | |
| 10 | 0.345 | |
| 100 | 0.3344 | |
| 1000 | 0.3238 | |
| 10000 | 0.3098 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Weight | 19.986414 mg |
| Fall Time | 16 ns |
| Rise Time | 35 ns |
| Rds On Max | 25.2 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | TSOP |
| Number of Pins | 6 |
| Input Capacitance | 1.35 nF |
| Power Dissipation | 2 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 42 ns |
| Turn-Off Delay Time | 40 ns |
| Element Configuration | Single |
| Max Power Dissipation | 4.2 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 30 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 8 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | -30 V |
