SI2325DS-T1-GE3
| Part No | SI2325DS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 150V 0.53A SOT-23 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
31560
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1252 | |
| 10 | 1.1027 | |
| 100 | 1.0689 | |
| 1000 | 1.0352 | |
| 10000 | 0.9902 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 1.4 mm |
| Height | 1.02 mm |
| Length | 3.04 mm |
| Weight | 1.437803 g |
| Lead Free | Lead Free |
| Packaging | Digi-Reel® |
| REACH SVHC | Unknown |
| Rds On Max | 1.2 Ω |
| Schedule B | 8541210080 |
| Nominal Vgs | -4.5 V |
| Case/Package | SOT-23 |
| Number of Pins | 3 |
| Contact Plating | Tin |
| Input Capacitance | 510 pF |
| Power Dissipation | 750 mW |
| Threshold Voltage | -4.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 16 ns |
| Element Configuration | Single |
| Max Power Dissipation | 750 mW |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 1 Ω |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | -530 mA |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -150 V |
| Drain to Source Breakdown Voltage | -150 V |
