In Stock:
11343
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.16 | |
| 10 | 1.137 | |
| 100 | 1.1 | |
| 1000 | 1.07 | |
| 10000 | 1.02 |
Products Specifications
| Vgs(th) (Max) @ Id | 4V @ 250µA |
|---|---|
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-262 |
| Series | aMOS™ |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 3.5A, 10V |
| Power Dissipation (Max) | 104W (Tc) |
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Other Names | 785-1527-5 AOW7S65-ND |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 434pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 9.2nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Detailed Description | N-Channel 650V 7A (Tc) 104W (Tc) Through Hole TO-262 |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
